 |
Tim S. Cale
Director, Focus Center--New York, Rensselaer; Interconnections for Gigascale Integration
Professor, Chemical Engineering
Education:
Ph.D., Chemical Engineering, University of Houston, 1980
B.S., Chemical Engineering, Arizona State University, 1976
Career Highlights:
Professor Cale has been the director of the Focus Center on the Rensselaer campus since 1998, when he joined the university as a professor in the Department of Chemical Engineering. Prior to his arrival in Troy, he served as director of the Center for Solid State Electronics Research at Arizona State University (ASU), where he also held numerous roles, including assistant chair of chemical engineering and professor of engineering. Prior to his work at ASU, he held a postdoctoral fellowship at the University of Houston. Cale's industrial experience includes employment with such companies as Motorola, Intel Corporation and Monsanto Company. Cale is a member of the American Institute of Chemical Engineers, the Institute of Electrical and Electronics Engineers, the American Vacuum Society Materials Research Society, and The Electrochemical Society. He also has served as a reviewer for such organizations as the National Science Foundation and the American Society of Mechanical Engineers and is the associate editor for Transactions of Semiconductor Manufacturing.
Research Areas:
Cale's research focuses on transport and reaction fundamentals of processes used to fabricate integrated circuits. He developed the widely used model for transport and reaction during low-pressure deposition and etch processes. This model has been used in several computer programs to understand how process conditions affect thin film processing at the feature (micron scale). He has been interested in multiscale process modeling and simulation for a number of years. Cale has proposed processes in which conditions are varied in a preprogrammed, model driven manner to optimize process or film properties. He currently focuses on simulations and experiments designed to understand nucleation and grain evolution during deposition and processing. Cale's teaching interests include semiconductor materials processing, reaction engineering, and applied mathematics.
Selected Publications:
M. K. Gobbert, V. Prasad, and T. S. Cale, "A Feature Scale Model for Atomic Layer Deposition," to be published in the proceedings of the Eighteenth International VLSI Multilevel Interconnection Conference, 2001, in press.
M. O. Bloomfield, K. E. Jansen, and T. S. Cale, "Integrated Multiscale Process Simulation: Reactor Scale to Grain Scale," in press.
S. Sen, M. O. Bloomfield, S. Soukane, and T. S. Cale, "Feature Scale Modeling of Transient Processes in Copper ECD," in press.
Y. Kwon, J.-Q. Lu, R. J. Gutmann, R. P. Kraft, J. F. McDonald, and T. S. Cale, "Wafer Bonding Using Low-K Dielectrics as Bonding Glues in Three-Dimensional Integration," in press.
M. K. Gobbert, V. Prasad, and T. S. Cale, "Modeling and Simulation of Atomic Layer Deposition at the Feature Scale," submitted.
M. O. Bloomfield, V. Prasad, J. Lu, O. Klaas, A. M. Maniatty, M. S. Shephard, and T. S. Cale, "Modeling and Simulation Opportunities for 3D Integrated Circuits," submitted.
A. T. Kim, C. Puemi-Sukam, J. A. Tichy, and T. S. Cale, "Multiscale Modeling of Chemical Mechanical Planarization," submitted.
J.-Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta, D. L. Bae, J. McMahon, C. K. Hong, R. P. Kraft, O. Erdogan, P. M. Belemjian, J. F. McDonald, T. S. Cale, and R. J. Gutmann, E. Eisenbraun, B. Xu, J. Castracan, and A. Kaloyeros, "Fabrication of Via-chain Test Structures for 3D IC Technology Using Dielectric Bonding on 200 mm Wafers," submitted.
M. K. Gobbert, V. Prasad, and T. S. Cale, "A Transport and Reaction Model for Atomic Layer Deposition," submitted.
Y. Kwon, J.-Q. Lu, R. P. Kraft, J. F. McDonald, R. J. Gutmann, and T. S. Cale, "Wafer Bonding Using Dielectric Polymer Thin Films in 3D Integration," submitted.
Contact Information:
Tim S. Cale
6015 Center for Industrial Innovation
(518) 276-8676
calet@rpi.edu
www.rpi.edu/~calet