| Author | T. S. Cale, T. P. Merchant and L. J. Borucki |
|---|---|
| Title | The Roles of "3d/2d" and "3d/3d" Topography Simulators in Process Development: Model Development and Process Integration |
| Year | 1999 |
| Journal | Advanced Metallization Conference in 1998 |
| Volume | 1998 |
| Pages | 737-741 |
| Publisher | Materials Research Society |
| Editor | G. S. Sandhu, H. Koerner, M. Murakami, Y. Yasuda and N. Kobayashi |
| Abstract | Transport and reaction submodels needed for physics-based process simulations will continue to be developed using experiments performed on structures that are 2d, combined with three dimensional 3d transport simulations; i.e., "3d/2d" simulations. Three dimensional device structures will be generated using "3d/3d" topography simulations, using algorithms that emphasize robustness. We present two case studies to demonstrate the roles of 3d/2d and 3d/3d simulations. First, we discuss plasma enhanced deposition of silicon dioxide from TEOS, as an example of how 3d/2d and 3d/3d simulations are used together. Then, we discuss a process integration study to emphasize the important role that 3d/2d simulations will continue to play. |